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 VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN10LLS VN0605T VN0610LL VN2222LL 60
V(BR)DSS Min (V)
rDS(on) Max (W)
5 @ VGS = 10 V 5 @ VGS = 10 V 5 @ VGS = 10 V 5 @ VGS = 10 V
VGS(th) (V)
0.8 to 2.5 0.8 to 3.0 0.8 to 2.5 0.6 to 2.5
ID Min (A)
0.32 0.18 0.28 0.23
FEATURES
D D D D D Low On-Resistance: 2.5 W Low Threshold: <2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffering High-Speed Circuits Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Solid State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems
TO-226AA (TO-92)
S G D 1 2 3 Top View VN0610LL VN2222LL
Front View
VN0610LL
S "S" VN0 610LL xxyy G D
TO-92S
1 2 3 Top View VN10LLS
TO-236 (SOT-23)
Front View
VN10LLS
G "S" VN 10LLS xxyy S "S" = Siliconix Logo xxyy = Date Code Top View 2 1 3 D
VN0605T
V2wll
VN2222LL
"S" VN2 222LL xxyy "S" = Siliconix Logo xxyy = Date Code
V2 = Part Number Code for VN0605T w = Week Code ll = Lot Traceability
VN0605T
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage--Non-Repetitiveb Gate-Source Voltage--Continuous Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS VGSM VGS ID IDM PD RthJA TJ, Tstg
VN10LLS
60 "30 "20 0.32 0.2 1.4 0.9 0.4 139
VN0605T
60 "30 "20 0.18 0.11 0.72 0.36 0.14 350
VN0610LL
60 "30 "20 0.28 0.17 1.3 0.8 0.32 156
VN2222LL
60 "30 "20 0.23 0.14 1.0 0.8 0.32 156
Unit
V
A
Power Dissipation
W _C/W _C
Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms. Document Number: 70212 S-04279--Rev. G, 16-Jul-01
-55 to 150
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11-1
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VN10LLS VN0610LL VN0605T VN2222LL
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
VGS = 0 V, ID = 100 mA V(BR)DSS VGS(th) VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V
70 70 2.1
60 60 0.8 2.5 0.8 3.0 "100 "500 "100 10 500 1.0 500
60 V 0.6 2.5 "100 nA
Gate-Body Leakage
IGSS
TJ=125_C VDS = 0 V, VGS = "30 V VDS = 50 V, VGS = 0 V
Zero Gate-Voltage Drain Current
TJ= 125_C IDSS VDS = 48 V, VGS = 0 V TJ= 125_C
10 500 1000 4.5 4.5 2.4 4.4 230 180 500 100 80 7.5 5 9 5 10 100 750 500 7.5 7.5 7.5 13.5 750
mA m
On-State Drain Currentb
ID(on)
VDS = 10 V, VGS = 10 V VGS = 4.5 V, ID = 50 mA
mA
Drain-Source On-Resistanceb
VGS = 5 V, ID = 0.2 A rDS(on) VGS = 10 V, ID = 0.5 A TJ= 125_C
W
Forward Transconductanceb Common Source Output Conductanceb
VDS = 10 V, ID = 0.5 A gfs gos VDS = 10 V, ID = 0.2 A VDS = 5 V, ID = 50 mA
mS ms
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =25 V, VGS = 0 V f = 1 MHz 22 11 2 60 25 5 60 25 5 60 25 5 pF
Switchingc
Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time tON tOFF tON tOFF VDD = 15 V, RL = 23 W, ID ^ 0.6 A VGEN = 10 V, RG = 25 W VDD = 30 V, RL = 150 W, ID ^ 0.2 A VGEN = 10 V, RG = 25 W 7 7 7 11 10 10 20 20 VNBF06 10 10 ns
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Switching time is essentially independent of operating temperature.
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11-2
Document Number: 70212 S-04279--Rev. G, 16-Jul-01
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
1.0 VGS = 10, 9, 8, 7 V 0.8 ID - Drain Current (A) 6.5 V 6V 5.5 V 0.6 5V 0.4 4.5 V 4V 3.5 V 3V 0.0 0 1 2 3 4 5 ID - Drain Current (A) 0.8 TJ = -55_C 0.6 25_C 1.0
Transfer Characteristics
0.4 125_C 0.2
0.2
2.5 V 2, 1 V 6 0.0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
7 TJ = 25_C 6 rDS(on) - On-Resistance ( ) rDS @ 5 V = VGS C - Capacitance (pF) 5 4 3 2 1 0 0.0 rDS @ 10 V = VGS 40 50 60 VGS = 0 V f = 1 MHz
Capacitance
30 Ciss 20 Coss
10
Crss
0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
20 VDS = 30 V ID = 0.5 A VGS - Gate-to-Source Voltage (V) 16
Gate Charge
2.0
On-Resistance vs. Junction Temperature
VGS = 10 V, rDS @ 0.5 A rDS(on) - On-Resistance ( ) (Normalized) 1.5
12
1.0 VGS = 5 V, rDS @ 0.05 A
8
0.5
4
0 0 400 800 1200 1600 2000 2400
0.0 -55
-30
-5
20
45
70
95
120
145
Qg - Total Gate Charge (pC)
TJ - Junction Temperature (_C)
Document Number: 70212 S-04279--Rev. G, 16-Jul-01
www.vishay.com
11-3
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
1.000 6
On-Resistance vs. Gate-to-Source Voltage
5 IS - Source Current (A) TJ = 125_C 0.100 rDS(on) - On-Resistance ( )
ID = 50 mA
4
500 mA
3
TJ = 25_C 0.010
2
1
0.001 0.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.50 ID = 250 mA 0.25 VGS(th) - Variance (V)
-0.00
-0.25
-0.50
-0.75 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM
0.01 Single Pulse 0.01 0.1 1 10 100
2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t)
1K
10 K
t1 - Square Wave Pulse Duration (sec)
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11-4
Document Number: 70212 S-04279--Rev. G, 16-Jul-01
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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